Surface recombination probabilities of H on stainless steel, a-Si:H and oxidized silicon determined by threshold ionization mass spectrometry in H2 RF discharges
- 10 July 1996
- journal article
- Published by Elsevier in Surface Science
- Vol. 360 (1-3) , L495-L498
- https://doi.org/10.1016/0039-6028(96)00732-7
Abstract
No abstract availableKeywords
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