Pulsed 25-108/spl deg/C operation of GaInNAs multiple quantum well vertical cavity lasers
- 1 January 2000
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 229-230
- https://doi.org/10.1109/cleo.2000.906949
Abstract
Form only given.GaAs-based vertical cavity surface emitting laser (VCSEL) diodes are becoming increasingly important in transmitters. By using GaInNAs MQW active regions, the emission wavelength of GaAs-based lasers can be extended into the range of 1200-1300 nm. In addition, the reduced temperature sensitivity of this active region allows for the possibility of uncooled transmitter operation. Author(s) Coldren, C.W. Solid State & Photonics Lab., Stanford Univ., CA, USA Larson, M.C. ; Spruytte, S.G. ; Garrett, H.E. ; Harris, J.S.Keywords
This publication has 1 reference indexed in Scilit:
- GaInNAs: a novel material for long-wavelength semiconductor lasersIEEE Journal of Selected Topics in Quantum Electronics, 1997