The effect of submonolayer Sn δ-doping layers on the growth of InGaAs and GaAs

• 1 July 1991
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
• Vol. 9  (4) , 2150-2153
• https://doi.org/10.1116/1.585755

Abstract

Keywords

• THREE DIMENSIONAL
• ELECTRON DIFFRACTION
• ARSENIC
• CRYSTAL STRUCTURE
• OSCILLATIONS
• LAYER BY LAYER
• CRYSTAL GROWTH