Low-noise wideband indium-phosphide transferred-electron amplifiers
- 25 January 1973
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 9 (2) , 36-37
- https://doi.org/10.1049/el:19730025
Abstract
X band pulsed, InP transferred-electron reflection amplifiers have been characterised by a study of the small-signal admittance, the large-signal dynamic conductance and the noise figure. These measurements have been made as functions of voltage, frequency and temperature on a number of different vapour epitaxial layers. The lowest observed noise figure was 8.8 dB at 10.0 GHz. An instantaneous bandwidth of more than 4 GHz at 7 dB gain has been obtained using a simple impedance-equalisation circuit.Keywords
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