Pressure dependence of the band gaps of semiconductors
- 15 December 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (18) , 12516-12519
- https://doi.org/10.1103/physrevb.40.12516
Abstract
We use a minimal-basis orthogonalized linear combination of Gaussian orbitals technique to calculate linear and quadratic pressure coefficients of Si, Ge, and GaAs. Our calculation does not require any fitting to the properties of the strained materials, is computationally simple, and yields results that are in good agreement with experimental measurements.This publication has 25 references indexed in Scilit:
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