Growth of hydrogenated amorphous silicon due to controlled ion bombardment from a pure silane plasma
- 1 May 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (9) , 801-803
- https://doi.org/10.1063/1.94100
Abstract
The growth process, optical and structural properties of a-Si:H films deposited from a silane multipole dc discharge are analyzed by real time and spectroscopic ellipsometry, and ir absorption spectroscopy. Films deposited mainly from neutral polymerized species are systematically compared to films deposited from monomeric ionic species at various ion incident energy up to 100-eV. An increase of ion bombardment energy is shown to favor the formation of high density homogeneous and isotropic films.Keywords
This publication has 11 references indexed in Scilit:
- Dissociation cross sections of silane and disilane by electron impactChemical Physics, 1982
- Fast polarization modulated ellipsometer using a microprocessor system for digital Fourier analysisReview of Scientific Instruments, 1982
- Heterogeneities and surface effects in glow discharge deposited hydrogenated amorphous silicon filmsThin Solid Films, 1982
- Proton-magnetic-resonance studies of microstructure in plasma-deposited amorphous-silicon—hydrogen filmsPhysical Review B, 1981
- Effects of inert gas dilution of silane on plasma-deposited a-Si:H filmsApplied Physics Letters, 1981
- Silane dissociation mechanisms and thin film formation in a low pressure multipole dc dischargeApplied Physics Letters, 1980
- Optical spectra of glow-discharge-deposited siliconPhilosophical Magazine Part B, 1979
- Microstructure of plasma-deposited a-Si : H filmsApplied Physics Letters, 1979
- Reaction mechanisms of the radio frequency glow discharged deposition process in silane-heliumThin Solid Films, 1979
- Structural interpretation of the vibrational spectra of-Si: H alloysPhysical Review B, 1979