Strain-relaxed InGaAs buffer layers grown by molecular-beam epitaxy for 1.3 μm Fabry–Pérot optical modulators
- 1 May 1993
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 11 (3) , 932-934
- https://doi.org/10.1116/1.586743