Epitaxial structure SrTiO3〈011〉 on Si〈001〉
- 1 May 2001
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 89 (10) , 5421-5424
- https://doi.org/10.1063/1.1357461
Abstract
An epitaxial structure, 〈011〉-oriented film on Si〈001〉 substrate, is developed by inserting an epitaxial buffer layer. Films are prepared by pulsed-laser deposition and evaluated by x-ray diffraction. Origin of this epitaxial growth is considered as a result of the ionic bonding at the interface of perovskite and fluorite structures.
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