Stabilizing Dielectric Constants of Fluorine‐Doped SiO2 Films by N 2 O ‐Plasma Annealing
- 1 January 1996
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 143 (1) , 381-385
- https://doi.org/10.1149/1.1836441
Abstract
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