Surface studies of epitaxial β-SiC on Si(100)
- 15 September 1984
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (6) , 1636-1641
- https://doi.org/10.1063/1.334150
Abstract
The surface properties of β-SiC epitaxial layers on Si (100) have been studied. As-grown layers showed submonolayer coverage of both O and excess C, with the former bonded as SiO. Suitably cleaned surfaces were C terminated with no observable excess C, and gave SiC 1×1 low-energy electron diffraction patterns. A well-defined structure was observed in the SiLVV and CKLL Auger spectra of clean, ordered surfaces. This structure was apparently characteristic of SiC bonding and was absent for disordered surfaces.This publication has 22 references indexed in Scilit:
- ‘‘Buffer-layer’’ technique for the growth of single crystal SiC on SiApplied Physics Letters, 1984
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- XPS, AES and friction studies of single-crystal silicon carbideApplications of Surface Science, 1982
- The lineshape of the L2,3 VV Auger spectrum of siliconSurface Science, 1980
- The early stages of oxygen adsorption on silicon surfaces as seen by electron spectroscopySurface Science, 1979
- SiO2 surface defect centers studied by AESSurface Science, 1978
- Sputtering process of a silicon carbide surface with energetic ions by means of an AES-SIMS-FDS combined systemJournal of Nuclear Materials, 1978
- The diamond surfaceSurface Science, 1977
- LEED and Auger electron observations of the SiC(0001) surfaceSurface Science, 1975
- Chemical Effects in Auger Electron SpectroscopyJournal of Applied Physics, 1972