Exciton electroabsorption at room temperature in InGaAs/InP multiquantum-well structures grown by atmospheric-pressure MOCVD
- 7 May 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (10) , 516-518
- https://doi.org/10.1049/el:19870373
Abstract
Sharp excitonic absorption features have been observed in MOCVD-grown InGaAs/InP multiquantum-well structures via a study of the spectral dependence of the photocurrent characteristics of a PIN diode containing the multiquantum wells in the intrinsic region. The first observation of a shift of excitonic peak wavelength with an applied electric field is reported for this material system.Keywords
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