MOCVD of ferroelectric PLZT thin films and their properties
- 31 December 1995
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 29 (1-4) , 173-176
- https://doi.org/10.1016/0167-9317(95)00138-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Electrical Properties for Capacitors of Dynamic Random Access Memory on (Pb, La)(Zr, Ti)O3 Thin Films by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1994
- Current-voltage characteristics of ultrafine-grained ferroelectric Pb(Zr, Ti)O3 thin filmsJournal of Materials Research, 1994
- Electrical transport and dielectric breakdown in Pb(Zr,Ti)O3thin filmsFerroelectrics, 1994
- Preparation and properties of (Pb,La)(Zr,Ti)O3 thin films by metalorganic chemical vapor depositionJournal of Applied Physics, 1992