Self-Limiting Growth in Atomic Layer Epitaxy of ZnTe
- 1 February 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (2B) , L246-248
- https://doi.org/10.1143/jjap.30.l246
Abstract
ZnTe films were grown on GaAs substrates by atomic layer epitaxy using the molecular beam epitaxy technique. We investigated the growth rate per cycle as a function of beam intensities of Zn and Te at the substrate temperature of 250°C and obtained the self-limiting growth of 0.5 monolayer per cycle, independent of Zn or Te beam intensity in the selected ranges.Keywords
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