Epitaxial growth and electronic structure of CdTe films

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Abstract
Atomic layer epitaxy (ALE) for growing II–VI compound single crystal films has been described. The growth of CdTe films on p-type CdTe(110) and (111)A substrates by ALE is shown to lead to high structural perfection. Surface crystal structure of these films is studied by LEED. The nonpolar (110) surface exhibits (1×1) symmetry while the polar (111)A surface is reconstructed showing (2×2) symmetry. Electronic valence band features are studied by angle-resolved photoemission and preliminary analysis of the photoemission spectra is presented. Most of the features may be accounted for in terms of the bulk electronic structure via direct transitions including primary and secondary cone emission. An intrinsic surface state (surface resonance) likely associated with a Te-derived dangling bond in the (110) film is observed.

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