Disordered Regions in Semiconductors Bombarded by Fast Neutrons
- 1 August 1959
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 30 (8) , 1214-1218
- https://doi.org/10.1063/1.1735295
Abstract
The width and depth of the potential wells surrounding disordered regions in neutron irradiated n-type germanium and extrinsic silicon are estimated. Numerical examples of well dimensions for a wide range of sample characteristics are presented. Some effects of disordered regions, e.g., (a) scattering of conduction electrons, (b) absorption of holes, and (c) polarizability, are discussed.This publication has 11 references indexed in Scilit:
- Effect of Irradiation on the Hole Lifetime of N-Type GermaniumJournal of Applied Physics, 1957
- Nuclear Radiation Effects in SolidsAnnual Review of Nuclear Science, 1956
- Fast-Neutron Bombardment of-Type GePhysical Review B, 1955
- Surface recombination and the floating junctionPhysica, 1954
- Electrical Properties of-Type GermaniumPhysical Review B, 1954
- Theory of Impurity Scattering in SemiconductorsPhysical Review B, 1950
- Effect of Neutron Bombardment on Order in the AlloyAuPhysical Review B, 1949
- On the disordering of solids by action of fast massive particlesDiscussions of the Faraday Society, 1949
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942
- LXXIX. The scattering of α and β particles by matter and the structure of the atomJournal of Computers in Education, 1911