Low-noise InGaAs HEMT using the new off-set recess gate process
- 13 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 979-982 vol.3
- https://doi.org/10.1109/mwsym.1989.38886
Abstract
A low-noise InGaAs HEMT (High electron mobility transistor) with a noise figure of 0.68 dB at 12 GHz has been developed using the offset recess gate process. The pseudomorphic n-AlGaAs/InGaAs HEMT structure was grown on a semi-insulating GaAs substrate by molecular-beam epitaxy. The offset recess gate process makes it possible to decrease the source and gate resistance. The breakdown voltage between gate and drain were above 6 V. A G/sub m/ of 510 mS/mm at minimum noise bias point was obtained in a 0.2- mu m-gate InGaAs HEMT. The minimum noise figure and associated gain of the device are 0.68 dB and 10.4 dB at V/sub ds/=2V, I/sub ds/=16 mA, and f=12 GHz, respectively. A three-stage amplifier using the new HEMT at the head has shown a minimum noise figure of 1.2 dB and a maximum gain of 31 dB.<>Keywords
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