40-Gb/s-class InP HEMT ICs for very-high-speed optical communications
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Future very-high-volume optical communication systems will require several-dozen-Gb/s ICs. The InP HEMT is one of the best candidates for these ICs due to its inherent millimeter-wave performance. This paper describes 40-Gb/s-class analog InP HEMT ICs that have been used with new design techniques to build high-speed optical receivers. Four kinds of ICs are covered: a preamplifier, a baseband amplifier, a limiting amplifier, and a Gilbert cell. Even in this early development stage, all ICs show promising performances that are superior or compatible to the best-ever reported results Author(s) Imai, Y. NTT LSI Labs., Kanagawa, Japan Nakamura, M. ; Kimura, S. ; Umeda, Y. ; Enoki, T.Keywords
This publication has 6 references indexed in Scilit:
- A 16-dB DC-to-50-GHz InAlAs/InGaAs HEMT distributed baseband amplifier using a new loss compensation techniquePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Sensitivity analysis of 50-GHz MMIC-LNA on gate-recess depth with InAlAs/InGaAs/InP HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A DC to 38-GHz distributed analog multiplier using InP HEMT'sIEEE Microwave and Guided Wave Letters, 1994
- Design and performance of clock recovery GaAs ICs for high-speed optical communication systemsIEEE Transactions on Microwave Theory and Techniques, 1993
- Uniplanar MMICs and their applicationsIEEE Transactions on Microwave Theory and Techniques, 1988
- The Matched Feedback Amplifier: Ultrawide-Band Microwave Amplification with GaAs MESFET'sIEEE Transactions on Microwave Theory and Techniques, 1980