Bias Effect in Rf Sputtering of PbTiO3 Thin Film
- 1 January 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (S3)
- https://doi.org/10.7567/jjaps.24s3.3
Abstract
PbTiO3 thin films have been prepared by rf sputtering under bias application to the substate. Relationships of the plasma potential to the bias voltage have been discussed. Some of the thin films prepared under the substrate bias are highly-oriented and the dielectric properties become better with increase of the bias voltage. The film surface is very smooth because the deposition rate of the horizontal face is high but the inclined plane is etched off very much.Keywords
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