Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst

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Abstract
Position-controlled carbon nanotube field effect transistors (FETs) have been fabricated by using patterned catalysts and chemical vapor deposition. A double-layer metal of platinum and cobalt was used as the catalyst. The use of a mixture of ethanol and argon as the source gas was effective for obtaining FETs with good characteristics. Coulomb oscillation was observed at room temperature. 76% of the fabricated devices showed FET operation. The characteristics of FETs with metallic nanotubes were improved by applying a high voltage.

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