Red pair luminescence in GaP:Cu
- 31 December 1972
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 5 (6) , 472-481
- https://doi.org/10.1016/0022-2313(72)90010-5
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Bound exciton luminescence in GaP:Cu,OJournal of Luminescence, 1972
- Impurity Absorption in GaP Doped with Copper and OxygenPhysica Status Solidi (b), 1971
- Spectral dependence of photo-ionization cross sections in GaP:Cu, OPhysica Status Solidi (a), 1971
- Cu-doped GaP diodes with negative characteristics and superlinear intensity dependence of the photocurrentSolid-State Electronics, 1971
- Energy-Dependent Capture Cross Sections and the Photoluminescence Excitation Spectra of Gallium Phosphide above the Threshold for Intrinsic Interband AbsorptionPhysical Review B, 1968
- Donor—acceptor pairs in semiconductorsPhysica Status Solidi (b), 1968
- Electrical and Optical Properties of High-Resistivity Gallium PhosphidePhysical Review B, 1966
- Temperature dependence of pair band luminescence in GaPJournal of Physics and Chemistry of Solids, 1965
- Some properties of copper-doped gallium phosphideJournal of Physics and Chemistry of Solids, 1962
- Spectral Distribution of PhotoconductivityPhysical Review B, 1956