Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition
- 10 February 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (6) , 413-414
- https://doi.org/10.1063/1.96515
Abstract
AlGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown by metalorganic chemical vapor deposition. A threshold current density at 16.5 °C and a characteristic temperature T0 of 4.9 kA/cm2 and 179 K respectively have been obtained for the diode on Si substrate.Keywords
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