Quantum-cascade lasers based on a bound-to-continuum transition
- 8 January 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (2) , 147-149
- https://doi.org/10.1063/1.1339843
Abstract
A quantum-cascade structure combining the advantages of the three-quantum well and superlattice active regions is demonstrated. In these devices, the emission occurs between a state localized close to the injection barrier and a miniband. A low threshold current density (3.6 kA/cm2), large slope efficiency (200 mW/A for 35 periods), and peak power (700 mW) are achieved at 30 °C while a peak power of 90 mW is obtained at temperatures as high as 150 °C.Keywords
This publication has 10 references indexed in Scilit:
- Electronic distribution in superlattice quantum cascade lasersApplied Physics Letters, 2000
- Improved temperature performance of Al0.33Ga0.67As/GaAs quantum-cascade lasers with emission wavelength at λ≈11 μmApplied Physics Letters, 2000
- Electrically tunable, room-temperature quantum-cascade lasersApplied Physics Letters, 1999
- High-performance superlattice quantum cascade lasersIEEE Journal of Selected Topics in Quantum Electronics, 1999
- Dependence of the device performance on the number of stages in quantum-cascade lasersIEEE Journal of Selected Topics in Quantum Electronics, 1999
- A multiwavelength semiconductor laserNature, 1998
- High performance interminiband quantum cascade lasers with graded superlatticesApplied Physics Letters, 1998
- Resonant tunneling in quantum cascade lasersIEEE Journal of Quantum Electronics, 1998
- Controlling the sign of quantum interference by tunnelling from quantum wellsNature, 1997
- Quantum Cascade Lasers without Intersubband Population InversionPhysical Review Letters, 1996