Surface Leakage Current in Silicon Fused Junction Diodes

1 January 1957

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE

Vol. 45 (1) , 39-43
https://doi.org/10.1109/jrproc.1957.278254

Abstract

The forward and reverse current of fused junction silicon diodes are compared with the predicted equations arising from a simplified model for surface leakage. It is found that analysis of the forward current in the "exponential" region leads to resolution of the contributions of the junction and the leakage path. The activation energies of the parameters describing these two contributions were determined; the former agrees with the value of the band gap. The implications and deficiencies of the model are discussed.

Keywords

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