Direct observation of very slow traps after homogeneous charge injection in MOS capacitors
- 1 July 1990
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 75 (2) , 147-149
- https://doi.org/10.1016/0038-1098(90)90360-n
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Degradation of metal/oxide/semiconductor structures by Fowler-Nordheim tunnelling injectionThin Solid Films, 1987
- Improved feedback charge method for quasistatic C V measurements in semiconductorsReview of Scientific Instruments, 1986
- Bias-temperature stress on metal-oxide-semiconductor structures as compared to ionizing irradiation and tunnel injectionJournal of Applied Physics, 1984
- Slow and fast states induced by hot electrons at Si-SiO2 interfaceJournal of Applied Physics, 1982
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966