Reradiation effects, lifetimes and probabilities of band-to-band transitions in direct A3B5 compounds of GaAs type
- 31 July 1982
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 27 (1) , 109-112
- https://doi.org/10.1016/0022-2313(82)90033-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The efficiency and radiative lifetime concentration dependences for the direct band-gap GaAs-like semiconductorsCzechoslovak Journal of Physics, 1980
- Minority-carrier lifetimes and internal quantum efficiency of surface-free GaAsJournal of Applied Physics, 1978
- Chapter 4 Photoluminescence I: TheoryPublished by Elsevier ,1972
- Spontaneous Radiative Recombination in SemiconductorsPhysical Review B, 1957