Negative resistance characteristics in tunneling experiments on metallic samples
- 1 March 1991
- journal article
- research article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 9 (2) , 500-502
- https://doi.org/10.1116/1.585555
Abstract
Scanning tunneling microscopy experiments on specific semiconducting samples show negative resistance characteristics. It is predicted that similar behavior can be achieved on metallic samples. The requirement for those samples is the existence of a bulk band gap for electron momentum perpendicular to sample surface. Calculations for a tip-vacuum-Ni(100) junction have been performed. In this system, negative resistance characteristics arise due to the presence of localized surface barrier states. Another property of those systems is that negative resistance disappears with increasing temperature.Keywords
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