High temperature device characterstics of GaAs MESFETs fabricated with an AlAs buffer layer
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 147-148
- https://doi.org/10.1109/drc.1994.1009450
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- High-temperature electrical characteristics of GaAs MESFETs (25-400 degrees C)IEEE Transactions on Electron Devices, 1992
- The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applicationsProceedings of the IEEE, 1991
- A new GaAs technology for stable FETs at 300 degrees CIEEE Electron Device Letters, 1989