A new set of semiconductor equations for computer simulation of submicron devices
- 31 August 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (8) , 783-788
- https://doi.org/10.1016/0038-1101(85)90065-6
Abstract
No abstract availableThis publication has 43 references indexed in Scilit:
- VLSI/LSI components: ICs are denser and faster than was thought achievable through state-of-the-art processing and computer-aided designIEEE Spectrum, 1982
- Mesostructure electronicsIEEE Transactions on Electron Devices, 1981
- Hot-carrier constraints on transient transport in very small semiconductor devicesIEEE Transactions on Electron Devices, 1981
- Hot electrons in layered semiconductorsPhysics Today, 1980
- On the physics and modeling of small semiconductor devices—ISolid-State Electronics, 1980
- Ballistic transport in semiconductor at low temperatures for low-power high-speed logicIEEE Transactions on Electron Devices, 1979
- Solid State: VLSI: Some fundamental challenges: Defining and designing the products made possible by very-large-scale integration are first on the list of priority tasksIEEE Spectrum, 1979
- A review of some charge transport properties of siliconSolid-State Electronics, 1977
- Current transport in narrow-base transistorsSolid-State Electronics, 1977
- Electron dynamics in short channel field-effect transistorsIEEE Transactions on Electron Devices, 1972