Electrical Conduction in Single‐Crystal Thallic Oxide: I, Crystals “As‐Grown” from the Vapor in Air
- 1 May 1977
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 60 (5-6) , 253-258
- https://doi.org/10.1111/j.1151-2916.1977.tb14119.x
Abstract
Thallic oxide, “T12O3,” has been shown to be a degenerate n‐type semiconductor with resistivity varying from 60 to 150 μΩ‐cm over the range 4° to 900°K. The carrier concentration was 7 × 1020 cm−3 and is temperature independent. Room‐temperature Hall mobility was 105 cm2 V−1 s−1, increasing to 130 cm2 V−1 s−1 below 70°K. Donor states were shown to be native defects, probably oxygen vacancies.Keywords
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