Excess noise in silicon avalanche photodiodes
- 1 April 1976
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (4) , 1605-1607
- https://doi.org/10.1063/1.322778
Abstract
The electric field dependence of the excess noise factor F in silicon reach-through avalanche photodiodes has been studied. The value of F is found to decrease with a decrease in the maximum electric field of the junction. This result shows sufficiently good agreement with a simplified calculation of McIntyre’s equation.This publication has 7 references indexed in Scilit:
- The distribution of gains in uniformly multiplying avalanche photodiodes: TheoryIEEE Transactions on Electron Devices, 1972
- Experimental observation of the dependence of avalanche noise on carrier ionization coefficientsProceedings of the IEEE, 1972
- Physics of Semiconductor DevicesPhysics Today, 1970
- An optimized avalanche photodiodeIEEE Transactions on Electron Devices, 1967
- Noise and ionization rate measurements in silicon photodiodesIEEE Transactions on Electron Devices, 1966
- Multiplication noise in uniform avalanche diodesIEEE Transactions on Electron Devices, 1966
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964