Co60 γ-Radiation-Induced Point Defects in Bi2Te3
- 1 September 1963
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 34 (9) , 2879-2884
- https://doi.org/10.1063/1.1729824
Abstract
The effects of extended Co60 γ radiation upon the electrical resistivity, Hall coefficient, and magneto‐resistance of Bi2Te3 have been examined. Co60 γ radiation causes an increase in the Hall coefficient in n‐type Bi2Te3 and a decrease in p type. For γ‐ray exposures in the range of 1018 photons cm−2, the apparent carrier removal rate is ∼10−1 carriers per Co60 photon. Thermal annealing of radiation‐induced damage was also investigated. The results may be most consistently analyzed in terms of a model which consists of radiation‐induced tellurium vacancies and interlaminar clusters of Te interstitials. The effects of the radiation‐induced point defects are discussed. Evidence of an effect on impurity band conduction at low temperatures in n‐type Bi2Te3 is observed.This publication has 9 references indexed in Scilit:
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