A V/SUB be/(T) model with application to bandgap reference design
- 1 December 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 20 (6) , 1283-1285
- https://doi.org/10.1109/jssc.1985.1052470
Abstract
The authors discuss a new model for the V/SUB be/(T) characteristics of a bipolar transistor. A curvature-compensated bandgap voltage reference scheme based on this model is described. A CMOS circuit configuration to implement the compensation scheme is proposed. It may be suitable for such uses as high-resolution monolithic data acquisition.Keywords
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