Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiation
- 1 August 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (3) , 235-237
- https://doi.org/10.1063/1.90310
Abstract
We demonstrate that a single short pulse of electron irradiation of appropriate energy is capable of recrystallizing epitaxially an amorphous Ge layer deposited on either 〈100〉 or 〈111〉 Si single‐crystal substrate. The primary defects observed in the 〈100〉 case were dislocations, whereas stacking faults were observed in 〈111〉 samples.Keywords
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- Correlation of ion channeling and electron microscopy results in the evaluation of heteroepitaxial siliconJournal of Applied Physics, 1973