Device technologies for InP-based HEMTs and their application to ICs
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper reports device technologies for 0.1-/spl mu/m-gate-InP-based HEMTs developed at our laboratory for ultra-high speed ICs. Key developments include a non-alloyed ohmic contact and a T-shaped gate process for high reproducibility and uniformity. As examples of their application to ICs, a 50 GHz low-noise amplifier with NF of 2.6 dB and a 60-GHz bandwidth distributed baseband amplifier with a flat gain of 9 dB are described. Also discussed is the use of a recess-etch stopper to further improve the reproducibility of the gate recess.Keywords
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