Room-temperature lasing action in In0.51Ga0.49P/In0.2Ga0.8As microcylinder laser diodes

Abstract
We report room‐temperature operation of electrically pumped whispering‐gallery mode In0.51Ga0.49P/In0.2Ga0.8As microcylinder laser diodes with emission at wavelength λ=1.0 μm and threshold current Ith=5 mA. Because the lasing modes do not overlap the diode’s central region, carrier density is not efficiently pinned by above‐threshold stimulated emission.

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