The pressure dependence of theE 2 reflectivity peak and of the dielectric constant in III–V semiconductors
- 1 September 1972
- journal article
- Published by Springer Nature in Czechoslovak Journal of Physics
- Vol. 22 (9) , 841-846
- https://doi.org/10.1007/bf01694862
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Temperature Coefficient of the Refractive Index of Diamond- and Zinc-Blende-Type SemiconductorsPhysical Review B, 1970
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. I. Electronic Dielectric ConstantPhysical Review B, 1969
- Electronic band structure and covalency in diamond-type semiconductorsJournal of Physics C: Solid State Physics, 1969
- Covalent Bond in Crystals. I. Elements of a Structural TheoryPhysical Review B, 1968
- Effect of Pressure on Interband Reflectivity Spectra of Germanium and Related SemiconductorsPhysical Review B, 1967
- Form Factors and Ultraviolet Spectra of Semiconductors at High PressurePhysical Review B, 1967
- Band Structure of Silicon from an Adjusted Heine-Abarenkov CalculationPhysical Review B, 1966
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- Effect of Alloying and Pressure on the Band Structure of Germanium and SiliconPhysical Review B, 1963
- Wave-Number-Dependent Dielectric Function of SemiconductorsPhysical Review B, 1962