Analysis of Impact Ionization Phenomena in InP by Monte Carlo Simulation

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Abstract
Impact ionizations by electrons and holes in InP have been analyzed by a Monte Carlo simulation. The carrier energy distribution functions, average carrier energy and variations of carrier energy after each scattering event have been calculated for a wide range of applied electric field strengths, and the behavior of the carrier in the high-field region has been investigated. The calculated results have clarified how the impact ionizations by electrons and holes occur in InP. The factors dominating the impact ionization rates of electrons and holes in InP have been identified, and the conditions for enhancing the electron or hole ionization rate are discussed.