The Photovoltaic Observation of a Non-Conductive Layer due to BN Formed in a Boron Implanted Si Junction

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Abstract
An improved flying-spot scanning method using a chopped photon beam was applied to a boron implanted Si p-n junction 76 mm in diameter. In a small area of the junction, the ac photovoltage was 30% lower than that of the remaining area thus showing a clear contrast in the flying-spot scanning image. From studies of the frequency dependence of the photovoltage and measurements using a four-point probe, it was concluded that the peculiar layer was covered with a non-conductive layer. The electron beam diffration method showed this layer to be boron nitride (BN).