Silylation processes for 193-nm excimer laser lithography
- 1 June 1990
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 119-130
- https://doi.org/10.1117/12.20119
Abstract
A silylation process for novolac-based resins was developed which results in positive-tone imaging. This process is based on 193nminduced crosslinking followed by a low temperature silylation step. Novolac resin without diazoquinone additives may also be used as positive-tone resists. Typical conditions were exposure to dimethylsilyldimethylainine vapor at 10 Torr for 1 minute at 100 °C. This incorporates silicon in the upperniost 100 to 1000 nn of the film, depending on the resist. Etch selectivities in a 10 rnTorr oxygen reactive ion etching plasma with a bias voltage of -200 V were typically 30:1. Resolution below 0.3 m has been demonstrated with this technique.Keywords
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