Microwave oscillations in high-resistivity GaAs
- 1 January 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. ED-13 (1) , 88-94
- https://doi.org/10.1109/t-ed.1966.15639
Abstract
It has been found that Gunn-effect oscillations in high-resistivity GaAs cease when the product of the conduction electron density and the sample length drops below 1011cm-2as predicted by theory. The samples investigated exhibited impact ionization of a deep donor level lying 0.41 eV below the conduction band edge when subjected to an applied electric field equal to the Gunn-effect threshold field. Some observations concerning space-charge limited injection of electrons and concerning electrical breakdown in high-resistivity GaAs are also reported.Keywords
This publication has 6 references indexed in Scilit:
- Phenomenological aspects of CW microwave oscillations in GaAsSolid State Communications, 1965
- External negative conductance of a semiconductor with negative differential mobilityProceedings of the IEEE, 1965
- Instabilities of Current in III–V SemiconductorsIBM Journal of Research and Development, 1964
- Theory of the Gunn effectProceedings of the IEEE, 1964
- Specific Negative Resistance in SolidsProceedings of the Physical Society, 1963
- Energy-Level Model for High-Resistivity Gallium ArsenideNature, 1961