Low-Temperature Thermal Conductivity of-Type Ge and Si
- 15 April 1971
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 3 (8) , 2550-2556
- https://doi.org/10.1103/physrevb.3.2550
Abstract
The thermal conductivity of lightly doped -type Ge and Si at low temperatures is calculated in terms of a single-mode phonon relaxation time due to elastic scattering by holes in the four-fold degenerate ground state together with boundary and isotopic scattering. Good agreement between the theory and experiment is obtained except at very low temperatures. The relation between the present theory and the mechanism responsible for the heat pulse and ultrasonic attenuation is briefly discussed.
Keywords
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