CuIn1-xGaxSe2-based photovoltaic cells from electrodeposited precursors

14 October 1997

proceedings article
Published by SPIE-Intl Soc Optical Eng

Vol. 3138, 90-96
https://doi.org/10.1117/12.279196

Abstract

We have fabricated 13.7%-efficient CuIn_1-xGa_xSe₂ (CIGS)-based devices from electrodeposited precursors. As- deposited electrodeposited precursors are Cu-rich films. Additional In, Ga, and Se were added to the electrodeposited precursor film by physical evaporation to adjust the final composition to CuIn_1-xGa_xSe₂. Three devices with Ga/(In + Ga) ratio of 0.16, 0.26, and 0.39 were fabricated from electrodeposited precursors. The films/devices have been characterized by inductive-coupled plasma spectrometry, Auger electron spectroscopy, x-ray diffraction, electron-probe microanalysis, current-voltage characteristics, capacitance- voltage, and spectral response. The electrodeposited device parameters are compared with those of a 17.7% physical vapor deposited device.

Keywords

This publication has 0 references indexed in Scilit: