Thermal Oxidation of Arsenic‐Diffused Silicon

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Abstract
Thermal oxidation of arsenic‐diffused silicon was investigated in wet (95°C water) oxygen ambient over the relatively low temperature range of 650°–850°C. Arsenic was diffused into boron‐doped silicon from an elemental source in an evacuated quartz capsule. The surface concentration of total arsenic was while that of electrically active arsenic was . The rate constant in the linear regime of oxidation seemed to increase proportionally to the total arsenic concentration. This suggests that the surface reaction rate of oxidation is proportional to the total arsenic concentration in higher concentration region than a certain value which may lie in the range of . For this case, the equation which gives the relation between oxide thickness and oxidation time was derived. Calculated values from this equation agreed well with experimental results. The increase in the surface reaction rate is considered to be caused by catalyst function of arsenic in reaction of oxidant OH with silicon.
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