An analytical model for snapback in n-channel SOI MOSFET's

This publication has 6 references indexed in Scilit:

• Single-transistor latch in SOI MOSFETs
  IEEE Electron Device Letters, 1988
• Dependence of channel electric field on device scaling
  IEEE Electron Device Letters, 1985
• An analytical model for the channel electric field in MOSFET's with graded-drain structures
  IEEE Electron Device Letters, 1984
• The effect of high fields on MOS device and circuit performance
  IEEE Transactions on Electron Devices, 1984
• Snap-Back: A Stable Regenerative Breakdown Mode of MOS Devices
  IEEE Transactions on Nuclear Science, 1983
• A unified model for hot-electron currents in MOSFET's
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1981