X-Ray Mask Distortion: Process And Pattern Dependence
- 30 June 1986
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 0632, 118-133
- https://doi.org/10.1117/12.963676
Abstract
X-Ray lithography is widely believed to occupy an important future lithographic niche in the vicinity of 0.5 micron and below."] It will be technically easier to achieve resolution and depth of focus with X-Ray than with optical steppers in this lithographic regime. It will be much less expensive to print large volume runners like Dynamic RAMs, microprocessors, or CODECs with X-Ray than with electron beam direct write. However, it is also recognized that distortion in the X-Ray mask membrane may be a major obstacle to the exploitation of this niche, because of the extraordinary registration requirements of submicron design rules.Keywords
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