High-efficiency quasimicrowave GaAs FET power amplifier
- 7 May 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (10) , 512-513
- https://doi.org/10.1049/el:19870370
Abstract
A 1.7 GHz-based class-F GaAs FET amplifier is proposed. To achieve high-efficiency performance, a precisely adjustable terminating circuit constructed with lumped elements is introduced. Power-added efficiency of 68% at 1.5 W output is attained with the amplifier.Keywords
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