Room-temperature CW operation of λ = 1.55 μm InGaAsP/InP ITG-DFB-BCRW lasers with contacted surface grating

9 May 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (10) , 808-809
https://doi.org/10.1049/el:19910507

Abstract

The structure and fabrication of the first quasi-index-guided DFB laser with a contacted surface grating is described. This device is grown by a standard single step liquid phase epitaxy process without a corrugation overgrowth. Room-temperature CW-DFB-laser operation with a threshold current of 75 mA is reported. A sidemode-suppression ratio of 35 dB is achieved.

Keywords

1.55 MICRON
ROOM-TEMPERATURE CW OPERATION
CONTACTED SURFACE GRATING
THRESHOLD CURRENT
INGAASP-INP
STRUCTURE
SEMICONDUCTORS
35 DB
SIDEMODE-SUPPRESSION RATIO
SINGLE STEP LPE
75 MA
FABRICATION
QUASI-INDEX-GUIDED DFB LASER

This publication has 0 references indexed in Scilit: