A fully implanted V-groove power MOSFET

1 January 1978

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1978.189504

Abstract

This paper presents a microwave V-Groove Silicon Power MOSFET (VMOS) with drain to source breakdown voltage of 100V and drain current capability of 0.5A, and a forward transconductance of 150 millimho. A gain-bandwidth product (fT) of 1.5 GHz has been measured. The power density of this enhancement device is about 20KW/cm2of the active area. A refractory metal scheme has been used for improved device reliability. Ion implantation has been utilized in processing the device in order to obtain process control and good threshold voltage uniformity. A theoretical model of the device has been developed, and experimental data are compared with simple theory.

Keywords

MOSFET CIRCUITS
POWER MOSFET
BREAKDOWN VOLTAGE
MICROWAVE DEVICES
MICROWAVE FETS
TRANSCONDUCTANCE
THERMAL RESISTANCE
PARASITIC CAPACITANCE
SUBSTRATES
DOPING

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