GaAs Atomic Layer Epitaxy by Hydride VPE
- 1 March 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (3A) , L212
- https://doi.org/10.1143/jjap.25.l212
Abstract
GaAs atomic layer epitaxy is demonstrated in hydride vapor phase epitaxy by a dual-grown-chamber method. GaAs substrate is alternatively exposed to GaCl and As4 gases by transferring the substrate between two chambers. The growth rate was examined for differing growth conditions and was found to depend only on substrate transfer cycles. Furthermore, the present method can be applied to selective growth.Keywords
This publication has 4 references indexed in Scilit:
- Atomic layer epitaxy of III-V binary compoundsApplied Physics Letters, 1985
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985
- A quantum chemical study of chlorine desorption by hydrogen in the VPE of GaAsJournal of Crystal Growth, 1984
- Vapor growth kinetics of III–V compounds in a hydrogen-inert gas mixed carrier systemJournal of Crystal Growth, 1975