Polarized Electroabsorption and Carrier Mobilities in Amorphous Silicon Alloys
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Polarized electroabsorption effect in hydrogenated amorphous silicon alloys and its implication for band edge mobilityPhilosophical Magazine Part B, 1994
- Hall effect near the mobility edgeJournal of Non-Crystalline Solids, 1993
- Study of band-edge parameters in a-Si:H alloys by polarized electroabsorption effectsJournal of Non-Crystalline Solids, 1993
- Oxide growth on a-Si:H and its influence on surface gap statesJournal of Non-Crystalline Solids, 1989
- Polarized electroabsorption spectra of amorphous semiconductorsPhilosophical Magazine Part B, 1988
- Electron and hole transport in a-Si1−xGex:H alloysJournal of Applied Physics, 1986
- Energy dependence of the optical matrix element in hydrogenated amorphous and crystalline siliconPhysical Review B, 1985